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insulated gate bipolar transistor irg7psh73k10pbf 1 www.irf.com 9/8/10 v ces = 1200v i c(nominal) = 75a t sc 10 s, t j(max) =175c v ce(on) typ. = 2.0v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 10 s short circuit soa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient ? tight parameter distribution ? lead free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation e c g n-channel gc e g ate collector em itter super-247 g c e c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 220 i c @ t c = 100c continuous collector current 130 i nominal nominal current 75 i cm pulse collector current, v ge =15v 225 i lm clamped inductive load current, v ge =20v 300 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 1150 p d @ t c = 100c maximum power dissipation 580 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.13 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? a w c/w
irg7psh73k10pbf 2 www.irf.com notes: calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 195a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
v cc = 80% (v ces ), v ge = 20v, l = 20 h, r g = 5.0 . pulse width 400 s; duty cycle 2%. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v ( br ) ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250 a v ( br ) ces / t j temperature coeff. of breakdown voltage ? 1.58 ? v/c v ge = 0v, i c = 5.0ma (25c-175c) ?2.02.3 i c = 75a, v ge = 15v, t j = 25c v ce ( on ) collector-to-emitter saturation voltage ? 2.50 ? v i c = 75a, v ge = 15v, t j = 150c ?2.60? i c = 75a, v ge = 15v, t j = 175c v ge ( th ) gate threshold voltage 5.0 ? 7.5 v v ce = v ge , i c = 3.5ma v ge ( th ) / tj threshold voltage temp. coefficient ? -18 ? mv/c v ce = v ge , i c = 3.5ma (25c - 175c) gfe forward transconductance ? 53 ? s v ce = 50v, i c = 75a, pw = 80 s i ces collector-to-emitter leakage current ? 1.0 25 v ge = 0v, v ce = 1200v, t j = 25c ? 2340 ? v ge = 0v, v ce = 1200v, t j = 175c i ges gate-to-emitter leakage current ? ? 400 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 360 540 i c = 75a q g e gate-to-emitter charge (turn-on) ? 87 130 nc v ge = 15v q g c gate-to-collector charge (turn-on) ? 180 270 v cc = 600v e on turn-on switching loss ? 7.7 8.7 i c = 75a, v cc = 600v, v ge = 15v e off turn-off switching loss ? 4.6 5.6 mj r g = 4.7 , l = 200 h, t j = 25c e total total switching loss ? 12.3 14.3 energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 63 81 i c = 75a, v cc = 600v, v ge = 15v t r rise time ? 118 138 ns r g = 4.7 , l = 200 h, t j = 25c t d ( off ) turn-off delay time ? 267 291 t f fall time ? 114 134 e on turn-on switching loss ? 11 ? i c = 75a, v cc = 600v, v ge =15v e off turn-off switching loss ? 7.4 ? mj r g =4.7 , l=200 h, t j = 175c e total total switching loss ? 18.4 ? energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 62 ? i c = 75a, v cc = 600v, v ge =15v t r rise time ? 110 ? ns r g = 4.7 , l = 200 h t d ( off ) turn-off delay time ? 330 ? t j = 175c t f fall time ? 237 ? c ies input capacitance ? 9450 ? pf v ge = 0v c oes output capacitance ? 340 ? v cc = 30v c res reverse transfer capacitance ? 230 ? f = 1.0mhz i c = 300a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 4.7 , v ge = +20v to 0v, t j =175c scsoa short circuit safe operating area 10 ? ? sv cc = 600v, vp =1200v ,t j = 150c rg = 4.7 , v ge = +15v to 0v conditions a
irg7psh73k10pbf www.irf.com 3 fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge =20v fig. 1 - typical load current vs. frequency 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 240 i c , c o l l e c t o r c u r r e n t ( a ) 0 25 50 75 100 125 150 175 t c (c) 0 200 400 600 800 1000 1200 p t o t ( w ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 s 100 s 1ms dc 0.1 1 10 100 f , frequency ( khz ) 0 20 40 60 80 100 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 164w 60% of rated voltage i ideal diodes square wave: 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a )
irg7psh73k10pbf 4 www.irf.com fig. 8 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 9 - typical v ce vs. v ge t j = -40c fig. 6 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 80 s 5 101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5 101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5101520 v ge (v) 0 5 10 15 20 25 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 0 2 4 6 8 10 12 14 16 18 20 v ce (v) 0 100 200 300 400 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 12 14 16 18 20 v ce (v) 0 100 200 300 400 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 02468101214161820 v ce (v) 0 100 200 300 400 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
irg7psh73k10pbf www.irf.com 5 fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 600v, r g = 5.0 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 600v, i ce = 75a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 600v, i ce = 75a; v ge = 15v fig. 17 - v ge vs. short circuit time v cc = 600v; t c = 150c fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 600v, r g = 5.0 ; v ge = 15v fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s 40 60 80 100 120 140 160 i c (a) 0 10000 20000 30000 40000 e n e r g y ( j ) e off e on 20 40 60 80 100 120 140 160 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 10 20 30 40 50 r g ( ) 0 5000 10000 15000 20000 25000 e n e r g y ( j ) e on e off 0 10 20 30 40 50 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 8 1012141618 v ge (v) 5 10 15 20 25 30 35 40 t i m e ( s ) 100 150 200 250 300 350 400 450 c u r r e n t ( a ) t sc i sc 4 6 8 10 12 14 16 v ge , gate-to-emitter voltage (v) 0 100 200 300 400 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c
irg7psh73k10pbf 6 www.irf.com fig 20. maximum transient thermal impedance, junction-to-case fig. 18 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 19 - typical gate charge vs. v ge i ce = 75a; l = 330 h 0 20 40 60 80 100 v ce (v) 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0309 0.000104 0.0520 0.000868 0.0471 0.003620 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 0 100 200 300 400 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 400v 600v
irg7psh73k10pbf www.irf.com 7 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 100 k 22k dut d1 0.0075 g force c fo rce c sen se e fo rce e sen se l rg 80 v dut vclamped + - l rg vcc diode clamp dut / driver 1k vcc dut 0 l v cc rg vcc dut r = vcc icm
irg7psh73k10pbf 8 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf3 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -100 0 100 200 300 400 500 600 700 800 900 -4-2024681012 time( s) v ce (v) -20 0 20 40 60 80 100 120 140 160 180 i ce (a) 90% i ce 10% v ce 10% i ce eoff loss tf -100 0 100 200 300 400 500 600 700 800 900 -3-2-101234567 time ( s) v ce (v) -20 0 20 40 60 80 100 120 140 160 180 i ce (a) test current 90% test current 10% v ce 10 % t es t c u r r en t tr eon loss -100 0 100 200 300 400 500 600 700 800 -10-5 0 5 101520 time (us) vce (v) -100 0 100 200 300 400 500 600 700 800 ice (a) vce ice
irg7psh73k10pbf www.irf.com 9 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/10 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. super-247 package is not recommended for surface mount application.

super-247 (to-274aa) part marking information assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c case outline and dimensions ? super-247

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